Semiconductor device and method of fabricating the same

ABSTRACT

Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 of Korean Patent Application Nos. 10-2010-0103907, filed onOct. 25, 2010, and 10-2010-0125025, filed on Dec. 8, 2010, the entirecontents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention disclosed herein relates to a semiconductor deviceand a method of fabricating the same.

A semiconductor device in a variety of electronic devices including homeappliances is an important component for determining their qualities. Ashigh capacity, multi-function and/or miniaturization of electronicdevices tend to be more required, demands on a semiconductor device withimproved reliability and other characteristics is being increased. Tosatisfy these demands, various techniques are introduced to improvecharacteristics of the semiconductor device.

A Double Diffused Metal Oxide Semiconductor Field Effect Transistor(DMOS) is one kind of a semiconductor device and refers to a Metal OxideSemiconductor Field Effect Transistor (MOSFET) type using diffusion toform a transistor region and is typically used as a power transistor fora high voltage power integrated circuit. The DMOS is a power transistorhaving a high-speed switching ability in a low gate voltage and anability of driving large currents.

SUMMARY OF THE INVENTION

The present invention may provide a highly-reliable semiconductor deviceand a method of fabricating the same.

The present invention may also provide a semiconductor device with theminimized resistance and a method of fabricating the same.

The present invention may also provide a semiconductor device with ahigh breakdown voltage and a method of fabricating the same.

Embodiments of the present invention provide methods of fabricating asemiconductor device may include: forming a trench in a semiconductorsubstrate of a first conductive type; forming a trench dopant containinglayer including a dopant of a second conductive type on a sidewall and abottom surface of the trench; forming a doping region by diffusing thedopant in the trench dopant containing layer into the semiconductorsubstrate; and removing the trench dopant containing layer.

In some embodiments, the methods may further include: forming a recessregion in the semiconductor substrate; forming a body dopant containingspacer including the second conductive type dopant on a sidewall of therecess region; and forming a body region by diffusing the dopant in thebody dopant containing spacer into the semiconductor substrate.

In other embodiments, the methods may further include: removing the bodydopant containing spacer; forming a gate insulation layer to cover abottom surface and a sidewall of the recess region; and forming a gateelectrode to fill the recess region.

In still other embodiments, the forming of the trench may includeforming a sub trench at one side of the body region and forming a maintrench by etching a bottom surface of the sub trench, and the methodsmay further include, before the forming of the main trench, forming aground region extending into the body region by implanting the secondconductive type dopant into the bottom surface of the sub trench.

In even other embodiments, a concentration of the second conductive typedopant may be higher in the ground region than the body region.

In yet other embodiments, the dopant in the trench dopant containinglayer may diffuse into the semiconductor substrate through heattreatment.

In further embodiments, the methods may further include forming asemiconductor layer on the sidewall and the bottom surface of thetrench.

In still further embodiments, the methods may further include: forming asource region by implanting the first conductive type dopant into anupper portion of the semiconductor layer, an upper portion of the bodyregion, and an upper portion of the ground region; and forming a drainregion by implanting the first conductive type dopant into a bottomsurface of the semiconductor substrate.

In even further embodiments, the methods, after the forming of thesemiconductor layer, may further include forming a gap fill insulationpattern that fills the trench.

In yet further embodiments, the trench dopant containing layer mayinclude one of Boron Silica Glass (BSG) or Phosphorus Silica Glass(PSG).

In yet further embodiments, the semiconductor substrate may include abase substrate and an epitaxial substrate on the base substrate; and thetrench is formed in the epitaxial substrate.

In yet further embodiments, the doping region may contact the basesubstrate.

In yet further embodiments, the doping region may not contact the basesubstrate because a portion of the epitaxial substrate is interposedbetween the base substrates.

In other embodiments of the present invention, methods of fabricating asemiconductor device include: forming a first trench on a semiconductorsubstrate of a first conductive type; forming a first trench dopantcontaining layer including a dopant of a second conductive type on asidewall and a bottom surface of the first trench; forming a firstdoping region by diffusing the dopant in the first trench dopantcontaining layer into the semiconductor substrate; forming a secondtrench by etching the bottom surface of the first trench; forming asecond trench dopant containing layer including the second conductivedopant on a sidewall and a bottom surface of the second trench; forminga second doping region by diffusing the dopant of the second trenchdopant containing layer into the semiconductor substrate; and removingthe second trench dopant containing layer.

In some embodiments, the methods may further include forming asemiconductor layer on the sidewall and the bottom surface of the secondtrench.

In other embodiments, the methods, before the forming of the secondtrench, may further include removing the first trench dopant containinglayer on the bottom surface of the first trench and the first trenchdopant containing layer remaining on the sidewall of the first trench.

In still other embodiments, a width of a lower region of the secondtrench may be narrower than that of an upper region of the secondtrench.

In still other embodiments of the present invention, semiconductordevices include: gap fill insulation patterns filling trenches in asubstrate; a semiconductor pillar defined between the gap fillinsulation patterns and doped with a dopant of a first conductive type;a gate electrode disposed in a recess region in the semiconductorpillar; a doping region disposed below the trenches and doped with adopant of a second conductive type; and a body region disposed in thesemiconductor pillar and surrounding a sidewall of the recess region,wherein the body region is doped with the second conductive type dopant;and a width of an upper region of the trenches is broader than of alower region of the trenches.

In some embodiments, a sidewall of the trenches may have a step-shapedstructure.

In other embodiments, the doping region may include a first dopingregion adjacent to a boundary between the upper region and the lowerregion of the trenches and a second doping region except the firstdoping region; and a concentration of the second conductive type dopantof the first doping region may be higher than that of the second dopingregion.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the present invention and, together with thedescription, serve to explain principles of the present invention. Inthe drawings:

FIGS. 1A through 1I are views illustrating a method of fabricating asemiconductor device according to a first embodiment of the presentinvention;

FIG. 2 is a view illustrating a semiconductor device according to amodification of the first embodiment of the present invention;

FIGS. 3A and 3C are views illustrating a method of fabricating asemiconductor device according to a second embodiment of the presentinvention;

FIG. 4 is a view illustrating a semiconductor device according to amodification of the second embodiment of the present invention;

FIGS. 5A through 5F are views illustrating a method of fabricating asemiconductor device according to a third embodiment of the presentinvention; and

FIG. 6 is a view illustrating a semiconductor device according to amodification of the third embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described belowin more detail with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstructed as limited to the embodiments set forth herein. Rather,these embodiments are provided so that this disclosure will be thoroughand complete, and will fully convey the scope of the present inventionto those skilled in the art.

In the drawings, the dimensions of layers and regions are exaggeratedfor clarity of illustration. It will also be understood that when alayer (or film) is referred to as being ‘on’ another layer or substrate,it can be directly on the other layer or substrate, or interveninglayers may also be present. Further, it will be understood that when alayer is referred to as being ‘under’ another layer, it can be directlyunder, and one or more intervening layers may also be present. Inaddition, it will also be understood that when a layer is referred to asbeing ‘between’ two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present. As usedherein, the term and/or includes any and all combinations of one or moreof the associated listed items. Also, though terms like a first and asecond are used to describe various members, components, regions,layers, and/or portions in various embodiments of the present invention,the members, components, regions, layers, and/or portions are notlimited to these terms. These terms are used only to differentiate onemember, component, region, layer, or portion from another one.Therefore, a member, a component, a region, a layer, or a portionreferred to as a first member, a first component, a first region, afirst layer, or a first portion in an embodiment can be referred to as asecond member, a second component, a second region, a second layer, or asecond portion in another embodiment. Like reference numerals refer tolike elements throughout.

A method of fabricating a semiconductor according to a first embodimentof the present invention is described.

FIGS. 1A through 1I are views illustrating a method of fabricating asemiconductor device according to a first embodiment of the presentinvention.

Referring to FIG. 1A, semiconductor substrates 100 and 102 including abase substrate 100 and an epitaxial substrate 102 on the base substrate100 are provided. The base substrate 100 may be doped with a firstconductive type dopant. The epitaxial substrate 102 may be formed on thebase substrate 100 through an epitaxial process. The epitaxial substrate102 may be doped with the same conductive type dopant as the basesubstrate 100. For example, the base substrate 100 and the epitaxialsubstrate 102 may be doped with an N-type dopant. The semiconductorsubstrates 100 and 102 may be a silicon substrate or a germaniumsubstrate.

The semiconductor substrate 100 may include a cell region A and anelectrode region B.

A thick oxide layer 104 and a nitride layer 106 may be formed on theepitaxial substrate 102. Recess regions 108 a and 108 b may be formed inthe cell region A by sequentially etching the nitride layer 106, thethick oxide layer 104, and the epitaxial substrate 102. The nitridelayer 106, the thick oxide layer 104, and the epitaxial substrate 102may be etched through an anisotropic etching process. The base substrate100 may not be etched. The bottom surfaces of the recess regions 108 aand 108 b may be formed of the epitaxial substrate 102.

After the forming of the recess regions 108 a and 108 b, an oxide layermay be formed on the inside of the recess regions 108 a and 108 b andthe oxide layer may be removed through a wet etching method.

Referring to FIG. 1B, a body dopant containing spacer 110 may be formedon the sidewalls of the recess regions 108 a and 108 b. The body dopantcontaining spacer 110 may have a different conductive type dopant thanthe semiconductor substrates 100 and 102. For example, if thesemiconductor substrates 100 and 102 are doped with the first conductivetype dopant, the body dopant containing spacer 110 may include a secondconductive type dopant. The body dopant containing spacer 110 may beformed by forming a body dopant containing layer including the secondconductive type dopant on the semiconductor substrates 100 and 102 andanisotropically etching the body dopant containing layer. Thereby, thebottom surfaces of the recess regions 108 a and 108 b may be exposed.The body dopant containing layer may be one of Boron Silica Glass (BSG)or Phosphorus Silica Glass (PSG), formed through Plasma-EnhancedChemical Vapor Deposition (PECVD).

Referring to FIG. 1C, a thermal treatment process may be performed.Thereby, the second conductive type dopants in the body dopantcontaining spacer 110 may penetrate the sidewalls of the recess regions108 a and 108 b to diffuse into the epitaxial substrate 102. A portionof the epitaxial substrate 102 adjacent to the sidewalls of the recessregions 108 a and 108 b may be counter-doped with the second conductivetype dopant, so that a body region 112 may be formed. The body region112 may surround the sidewalls of the recess regions 108 a and 108 b.

After the forming of the body region 112, the nitride layer 106 may beremoved. Unlike this, before the first dopant containing spacer 110 isthermally treated, the nitride layer 106 may be removed.

Referring to FIG. 1D, the body dopant containing spacer 110 may beremoved. The body dopant containing spacer 110 may be removed through awet etching method. After the removing of the body dopant containingspacer 110, the bottom surfaces of the recess regions 108 a and 108 bmay be etched. Thereby, the depths of the recess regions 108 a and 108 bmay be further deeper. After the etching of the bottom surfaces of therecess regions 108 a and 108 b, an oxide layer may be formed on thebottom surface and the sidewall of the recess regions 108 a and 108 band then may be removed.

First and second gate insulation layers 113 a and 113 b may be formed onthe bottom surface and the sidewall of the recess regions 108 a and 108b. The gate insulation layers 113 a and 113 b may include a thermaloxide layer and/or a Tetra-Ethyl-Ortho-Silicate (TEOS) formed by achemical vapor deposition method.

After the forming of the gate insulation layers 113 a and 113 b, a firstgate electrode 114 a filling the first recess region 108 a may be formedand a second gate electrode 114 b filling the second recess region 108 bmay be formed. The second gate electrode 114 b may include a body partfilling the second recess region 108 b and a contact part extending fromone end of the body part in a direction parallel to the top surface ofthe base substrate 100. The gate electrodes 114 a and 114 b may includea conductive material of the first conductive type dopant. For example,the gate electrodes 114 a and 114 b may include polycrystalline siliconof phosphorus and/or arsenic.

After the forming of the gate electrodes 114 a and 114 b, cappinginsulation layers 116 a and 116 b covering the respective gateelectrodes 114 a and 114 b may be formed. The capping insulation layers116 a and 116 b may be a silicon oxide layer formed through a thermaloxidization method.

Referring to FIG. 1E, a hard mask layer may be formed on thesemiconductor substrates 100 and 102 and a hard mask pattern 118 may beformed by patterning the hard mask layer. By using the hard mask pattern118 as an etch mask, the thick oxide layer 104 and the epitaxialsubstrate 102 may be etched to form sub trenches 120. For example, thesub trenches 120 may be formed at one side of the first gate electrode114 a between the gate electrodes 114 a and 114 b and in the electroderegion B. The one side of the first gate electrode 114 a may face theother side of the first gate electrode 114 a adjacent to the second gateelectrode 114 b. Based on the top surfaces of the base substrate 100,the bottom surfaces of the sub trenches 120 may be positioned at ahigher level than the bottom surfaces of the gate electrodes 114 a and114 b.

After the forming of the sub trench 120, a dopant ion 122 of the secondconductive type may be implanted using the hard mask pattern 118 as anion implantation mask. The dopant ion 122 of the second conductive typemay be implanted on the bottom surface of the sub trench 120. Next,through a thermal treatment process, the second conductive type dopantion 122 implanted on the bottom surface may diffuse to form a groundregion 124. The ground region 124 may overlap the body region 112. Aconcentration of the second conductive type dopant in the ground region124 may be higher than that in the body region 112.

Referring to FIG. 1F, the bottom surfaces of the sub trenches 120 may befurther etched to form main trenches 121. The bottom surfaces of the subtrenches 120 may be etched through an anisotropic etching process usingthe hard mask pattern 118 as an etch mask. Thereby, the ground region124 below the bottom surfaces of the sub trenches 120 may be etched sothat a ground region 124 a divided into the both sides of each of themain trenches 121 may be formed. The bottom surfaces of the maintrenches 121 may be formed of the epitaxial substrate 102.

After the forming of the main trenches 121, a trench dopant containinglayer 130 may be formed on the semiconductor substrate 100 and 102. Thetrench dopant containing layer 130 may include the second conductivetype dopant. The trench dopant containing layer 130 may be conformallyformed on the bottom surfaces and the sidewalls of the main trenches121, so that empty inner spacers surrounded by the trench dopantcontaining layer 130 may be defined in the main trenches 121. The trenchdopant containing layer 130 may be one of BSG or PSG formed throughPECVD.

A thermal treatment process may be performed. Thereby, the secondconductive type dopants in the trench dopant containing layer 130penetrates the sidewalls and the bottom surfaces of the main trenches121 to spread into the epitaxial substrate 102. Portions of theepitaxial substrate 102 adjacent to the sidewalls and the bottomsurfaces of the main trenches 121 amy be counter-doped with the secondconductive type dopant, so that a doping region 132 may be formed. Thedoping region 132 may contact the base substrate 100.

Since the dopant of the trench dopant containing layer 130 diffuses toform the doping region 132, a concentration of the second conductivetype dopant in the doping region 132 may be uniform. Accordingly, a turnon resistance of a semiconductor device is reduced such that itsreliability may be improved. If the doping region is formed through anion implantation method, a concentration of the second conductive typedopant in the doping region may be uneven due to the depth of the maintrench 121, and accordingly, reliability of the semiconductor device maybe deteriorated. However, as mentioned above, the doping region 132 mayform a trench dopant containing layer 130 in the main trench 121, andthe trench dopant containing layer 130 may be formed through a thermaltreatment process, so that a concentration of the second conductive typedopant may be uniform in the doping region 132.

A concentration of the second conductive type dopant in a portion of thebody region 112 adjacent to the sidewalls of the main trenches 121 maybe higher than that in another portion of the body region 112. Aconcentration of the second conductive type dopant in a portion of theground region 124 a adjacent to the sidewalls of the main trenches 121may be higher than that in another portion of the ground region 124 a.

Referring to FIG. 1G, after the forming of the doping region 132, thetrench dopant containing layer 130 may be removed. The trench dopantcontaining layer 130 may be removed through a wet etching method. Afterthe removing of the trench dopant containing layer 130, gap fillinsulation patterns filling the inner spaces in the main trenches 121may be formed. According to an embodiment, the sidewalls and bottomsurfaces of the gap fill insulation patterns 142 a may contact thedoping region 132.

The gap fill insulation patterns 142 a may be formed by forming aninsulation layer filling the main trenches 121 on the semiconductorsubstrates 100 and 102 and etching the insulation layer using the hardmask pattern 118 as an etch stop layer. After the forming of the gapfill insulation patterns 142 a, the hard mask pattern 118 may beremoved.

A semiconductor pillar 144 may be defined between the respectivelyadjacent gap fill insulation patterns 142 a. The semiconductor pillar144 may be doped with the first conductive type dopant. Thesemiconductor pillar 144 may be a portion of the epitaxial substrate 102disposed between the respectively adjacent gap fill insulation patterns142 a.

Referring to FIG. 1H, a mask layer 150 covering the electrode region Bmay be formed. The mask layer 150 may be a photoresist layer. The masklayer 150 may cover a portion of the second gate electrode 114 badjacent to the electrode region B and may not over the semiconductorpillar 144, the body region 112, the ground region 124 a and the gapfill insulation patterns 142 a.

A dopant ion 152 of the first conductive type may be implanted using themask layer 150 as an ion implantation mask. In this case, the insulationlayer 104 may be used as a buffer layer for implanting the firstconductive type dopant ion 152. Upper portions of the body region 112and the ground region 124 a may be counter-doped with the firstconductive type dopant. The first conductive type dopant ion 152 may notbe implanted on the body region 112 below the contact part of the secondgate electrode 114 b.

By implanting the first conductive type dopant ion 152 into the upperportion of the body region 112 and the upper portion of the groundregion 124 a, a source region 154 doped with the first conductive typedopant may be formed. The source region 154 may be formed at the bothsides of the upper regions of the main trenches 121. The source region154 may be formed at the both sides of the first gate electrode 114 aand the one side of the second gate electrode 114 b adjacent to thefirst gate electrode 114 a.

Referring to FIG. 1I, an inter layer insulation layer 160 may be formedon the semiconductor substrates 100 and 102. A first wiring 162contacting the source region 154, a second wiring 164 contacting thesecond gate electrode 114 b, and a third wiring 166 on the electroderegion B may be formed. The forming of the first to third wirings 162,164, and 166 may include forming openings to expose a portion of thesource region 154, the top surfaces of the gap fill insulation patterns142 a, and a portion of the contact part of the second gate electrode114 b, removing an upper portion of the gap fill insulation patterns 142a, forming a conductive layer to fill an upper region of the trench 121without the gap fill insulation patterns 142 a, and patterning theconductive layer. The conductive layer may include metal.

A drain region 168 doped with the first conductive type dopant may beformed on the bottom surface of the base substrate 100. The drain region168 may be formed by implanting the first conductive type dopant on thebottom surface of the base substrate 100. The bottom surface of the basesubstrate 100 may face the top surface of the base substrate 100contacting the epitaxial substrate 102.

A semiconductor device formed through to the method of fabricating asemiconductor device according to the first embodiment of the presentinvention will be described with reference to FIG. 1I.

Referring to FIG. 1I, semiconductor substrates 100 and 102 including acell region A and an electrode region B are provided. The semiconductorsubstrates 100 and 102 may include a base substrate 100 of a firstconductive type and an epitaxial substrate 102 of the first conductivetype disposed on the base substrate 100.

A plurality of trenches 121 may be disposed in the epitaxial substrate102. Each of the trenches 121 may be filled with the gap fill insulationpatterns 142 a. According to an embodiment, the gap fill insulationpatterns 142 a may fill the insides of the trenches 121. The gap fillinsulation pattern 142 a may contact the inner surfaces of the trenches121. A semiconductor pillar 144 may be defined between the respectivelyadjacent gap fill insulation patterns 142 a. The semiconductor pillar144 may be a portion of the epitaxial substrate 102 interposed betweenthe respectively adjacent gap fill insulation patterns 142 a.

Recess regions 108 a and 108 b may be formed in the epitaxial substrate102 at one side of the trenches 121. For example, the recess regions 108a and 108 b may include a first recess region 108 a formed in thesemiconductor pillar 144 defined by the gap fill insulation patterns 142a and a second recess region 108 b formed at one side of the trench 121adjacent to the electrode region B. Based on the top surface of the basesubstrate 100, the bottom surfaces of the recess regions 108 a and 108 bmay be disposed at a higher level than the bottom surfaces of thetrenches 121.

A first gate insulation layer 113 a may cover the bottom surface and theside surface of the first recess region 108 a and a first gate electrode114 a may fill an inner space surrounded by the first gate insulationlayer 113 a in the first recess region 108 a. A second gate insulationlayer 113 b may cover the bottom surface and the side surface of thesecond recess region 108 b and a second gate electrode 114 b may fill aninner space surrounded by the second gate insulation layer 113 b in thesecond recess region 108 b. The second gate electrode 114 b may includea body part filling the second recess region 108 b and a contact partextending in a direction parallel to the top surface of the basesubstrate 100 at one end of the body part. First and second cappinginsulation layers 116 a and 116 b may respectively cover the topsurfaces of the first gate electrode 114 a and the contact part of thesecond gate electrode 114 b.

A body region 112 may surround the sidewalls of the recess regions 108 aand 108 b. The body region 112 may surround the upper portions of thesidewalls of the recess regions 108 a and 108 b. The lower potions andbottom surfaces of the sidewalls of the recess regions 108 a and 108 bmay be formed of the epitaxial substrate 102. The body region 112 may bea portion of the epitaxial substrate 102 adjacent to the upper portionsof the sidewalls of the recess regions 108 a and 108 b, which may becounter-doped with the second conductive type dopant.

A ground region 124 a may surround the upper portion of the sidewall ofthe trench 121. The ground region 124 a may be a portion of theepitaxial substrate 102 adjacent to the upper portion of the sidewall ofthe trench 121, which may be counter-doped with the second conductivetype dopant. A concentration of the second conductive type dopant of theground region 124 a may be higher than that of the body region 112.

A doping region 132 may be formed below the inside of the trench 121.The doping region 132 may be a portion of the epitaxial substrate 102adjacent to the remaining portion except the bottom surface and theupper portion of the sidewall of the trench 121, which may becounter-doped with the second conductive type dopant. The doping region132 below the bottom surface of the trench 121 may contact the basesubstrate 100. A concentration of the second conductive type dopant ofthe doping region 132 may be lower than that of the ground region 124 a.According to an embodiment, the doping region 132 may directly contactthe gap fill insulation patterns 142 a.

A source region 154 may be disposed in the epitaxial substrate 102 atthe both sides of the trenches 121. The source region 154 may bedisposed between the first recess region 108 a and the trenches 121. Thesource region 154 may be an upper portion of the ground region 124 a andan upper portion of the body region 112 adjacent to the top surface ofthe epitaxial substrate 102, all of which may be doped with the firstconductive type dopant.

A drain region 168 doped with the first conductive type dopant may bedisposed on the bottom surface of the base substrate 100. The drainregion 168 may be formed by implanting a dopant ion of the firstconductive type into the bottom surface of the base substrate 100.

A first wiring 162 penetrating the thick oxide layer 104 and theinterlayer insulation layer 161 formed on the epitaxial substrate 102 tocontact the source region 154, a second wiring 164 penetrating theinterlayer insulation layer 161 and the second capping insulation layer116 b to contact the second gate electrode 114 b, and a third wiring 166on the interlayer insulation layer 161 of the electrode region B may bedisposed.

According to the first embodiment of the present invention, the dopingregion below the bottom surface of the trench 121 contacts the basesubstrate 100. Unlike this, according to a modification of the firstembodiment of the present invention, a doping region may not contact thebase substrate 100. This will be described with reference to FIG. 2.

FIG. 2 is a view illustrating a semiconductor device according to amodification of the first embodiment of the present invention.

Referring to FIG. 2, the semiconductor device according to amodification of the first embodiment of the present invention is similarto that described with reference to FIG. 1I. However, a doping region132 a below the bottom surface of a trench 121 may not contact the topsurface of the base substrate 100. Thereby, a semiconductor pillar 144and an epitaxial substrate 102 may contact each other.

Unlike the method of fabricating a semiconductor device according to thefirst embodiment of the present invention, a semiconductor layer may beformed between a trench and a gap fill insulation pattern. This will bedescribed with reference to FIGS. 3A and 3C.

FIGS. 3A and 3C are views illustrating a method of fabricating asemiconductor device according to a second embodiment of the presentinvention. The semiconductor device according to this embodiment mayinclude all the contents described with reference to FIGS. 1A through1F.

Referring to FIG. 3A, after the forming of the doping region 132, thetrench dopant containing layer 130 may be removed. The trench dopantcontaining layer 130 may be removed through a wet etching method. Afterthe removing of the trench dopant containing layer 130, a semiconductorlayer 140 may be formed on the bottom surfaces and the sidewalls of themain trenches 121. The semiconductor layer 140 may include at least oneof an epitaxial layer and a polysilicon layer. If the semiconductorlayer 140 includes the epitaxial layer, the semiconductor layer 140 maybe formed on the bottom surfaces and the sidewalls of the main trenches121 through an epitaxial process. The semiconductor layer 140 may beconformally formed on the inner surfaces of the main trenches 121 todefine empty inner spaces surrounded by the semiconductor layer 140 inthe main trenches 121. The semiconductor layer 140 may be doped with thesecond conductive type dopant. Unlike this, the semiconductor layer 140may not be doped with the second conductive type dopant.

Gap fill insulation patterns 142 filling the inner spaces of the maintrenches 121 may be formed. The gap fill insulation patterns 142 may beformed through the same method as the forming of the gap fill insulationpatterns 142 a in the above-mentioned first embodiment.

A semiconductor pillar 144 may be formed between the respectivelyadjacent gap fill insulation patterns 142. The semiconductor pillar 144may be doped with the first conductive type dopant. The semiconductorpillar 144 may be a portion of the epitaxial substrate 102 disposedbetween the respectively adjacent gap fill insulation patterns 142.

Referring to FIG. 3B, a mask layer 150 may be formed to cover theelectrode region B. The mask layer 150 may cover a portion of the secondgate electrode 114 b adjacent to the electrode region B, and may notcover the semiconductor pillar 144, the body region 112, the groundregion 124 a, the semiconductor layer 140, and the gap fill insulationpatterns 142.

The first conductive type dopant ion 152 may be implanted using the masklayer 150 as an ion implantation mask. In this case, the insulationlayer 104 may be used as a buffer layer for implanting the firstconductive type dopant ion 142. The upper portions and the body region112 and the ground region 124 a may be counter-doped with the firstconductive type dopant. The first conductive type dopant ion 152 may notbe implanted on the body region 112 below the contact portion of thesecond gate electrode 114 b.

A source region 154 doped with the first conductive type dopant may beformed by implanting the first conductive type dopant ion 152 into theupper portion of the body region 112, the upper portion of the groundregion 124 a, and the upper portion of the semiconductor layer 140. Thesource region 154 may be formed at both sides of the upper regions ofthe main trenches 121. The source region 154 may be formed at the bothsides of the first gate electrode 114 a and the one side of the secondgate electrode 114 b adjacent to the first gate electrode 114 a.

Referring to FIG. 3C, an interlayer insulation layer 160 may be formedon the semiconductor substrates 100 and 102. A first wiring 152contacting the source region 154, a second wiring 164 contacting thesecond gate electrode 114 b, and a third wiring of the electrode regionB may be formed. The forming of the first to third wirings 162, 164, and166 may be formed through the same method described in the firstembodiment. The first to third wirings 162, 164, and 166 may includemetal.

A drain region 168 doped with the first conductive type dopant may beformed at the bottom surface of the base substrate 100. The drain region168 may have the same form and the same method described in the firstembodiment.

A semiconductor device formed through the method of fabricating asemiconductor device according to the second embodiment of the presentinvention will be described with reference to FIG. 3C

Referring to FIG. 3C, semiconductor substrates 100 and 102 including acell region A and an electrode region B are provided. The semiconductorsubstrates 100 and 102 may include a first conductive type basesubstrate 100 and a first conductive epitaxial substrate 102 on the basesubstrate 100.

A plurality of trenches 121 may be disposed in the epitaxial substrate102. Each of the trenches 142 may be filled with a semiconductor layer140 and gap fill insulation patterns 142. The semiconductor layer 140may cover the bottom surfaces and the sidewalls of the trenches 121 andfill inner spacers surrounded by the semiconductor layer 140 in thetrenches 121. The semiconductor layer 140 may include at least one of anepitaxial layer and a polysilicon layer. A semiconductor pillar 144 maybe defined between the respectively adjacent gap fill insulationpatterns 142. The semiconductor pillar 144 may be a portion of theepitaxial substrate 102 interposed between the respectively adjacent gapfill insulation patterns 142.

Recess regions 108 a and 108 b may be disposed in the epitaxialsubstrate 102 at one side of the trenches 121. The recess regions 108 aand 108 b may include all contents described in the first embodiment.

A first gate insulation layer 113 a may cover the bottom surface andside of the first recess region 108 a and may fill an inner spacesurrounded by the first gate insulation layer 113 a in the first recessregion 108 a. A second gate insulation layer 113 b may cover the bottomsurface and side of the second recess region 108 b and may fill an innerspace surrounded by the second gate insulation layer 113 b in the secondrecess region 108 b. The second gate electrode 114 b may be the sameform described in the first embodiment. The top surface of the firstgate electrode 114 a and the contact portion of the second gateelectrode 114 b may be covered by first and second capping insulationlayers 116 a and 116 b.

A body region 112 may surround the sidewalls of the recess regions 108 aand 108 b. A ground region 124 a may be disposed to surround the upperportion of the sidewall of the trench 121. The body region 112 and theground region 124 a may have the same form and/or properties describedin the first embodiment.

A doping region 132 may be disposed below the inner surface of thetrench 121. The doping region 132 may have the same form and/orproperties described in the first embodiment.

A source region 154 may be disposed in the epitaxial substrate 102 atboth sides of the trenches 121. The source region 154 may be disposedbetween the first recess region 108 a and the trenches 121. The sourceregion 154 may be an upper portion of the semiconductor layer 140, anupper portion of the body region 112, and an upper portion of the groundregion 124 a adjacent to the top surface of the epitaxial substrate 102,all of which are doped with the first conductive type dopant.

A drain region doped with the first conductive type dopant may bedisposed on the bottom surface of the base substrate 100. The drainregion 168 may be formed by implanting the first conductive type dopantion into the bottom surface of the base substrate 100.

A first wiring 162 penetrating a thick oxide layer 104 and an interlayerinsulation layer 160 on the epitaxial substrate 102 to contact thesource region 154, a second wiring 164 penetrating the interlayerinsulation layer 160 and the second capping insulation layer 116 b tocontact the second gate electrode 114 b, a third wiring on theinterlayer insulation layer 160 of the electrode region B may bedisposed.

According to an embodiment, a doping region 132 below the bottom surfaceof the trench 121 contacts the base substrate 100. Unlike this,according to a modification of the embodiment, the doping region may notcontact the base substrate 100. This will be described with reference toFIG. 4.

FIG. 4 is a view illustrating a semiconductor device according to amodification of the second embodiment of the present invention.

Referring to FIG. 4, the semiconductor device according to themodification is similar to that described with reference to FIG. 3C.However, a doping region 132 a formed below the bottom surface of thetrench 121 may not contact the top surface of the base substrate 100.Therefore, a semiconductor pillar 145 and an epitaxial substrate 102 maycontact each other.

Unlike the methods of fabricating a semiconductor device according tothe first and second embodiments of the present invention, the trenchmay be formed through a plurality of etching processes. This will bedescribed with reference to FIGS. 5A through 5F.

FIGS. 5A through 5F are views illustrating a method of fabricating asemiconductor device according to a third embodiment of the presentinvention. The semiconductor device according to this embodiment mayinclude all the contents described with reference to FIGS. 1A through1F.

Referring to FIG. 5A, by etching the bottom surfaces of sub trenches120, first main trenches 120 a may be formed. The bottom surfaces of thesub trenches 120 may be etched through an anisotropic etching processusing the hard mask pattern 118 as an etch mask until the epitaxialsubstrate 102 is exposed. Thereby, the bottom surfaces of the first maintrenches 120 a may be formed of the epitaxial substrate 102. While thebottom surfaces of the sub trenches 120 are etched, a ground region 124below the bottom surfaces of the sub trenches 120 may be etched, so thata ground region 124 a may be divided into the both sides of the firstmain trenches 120 a.

After the forming of the first main trenches 120 a, a first trenchdopant containing layer 131 may be formed on semiconductor substrates100 and 102. The first trench dopant containing layer 131 may include asecond conductive type dopant. The first trench dopant containing layer131 is conformally formed on the bottom surfaces and the sidewalls ofthe first main trenches 120 a, sot that empty inner spaces surrounded bythe first trench dopant containing layer 131 may be defined in the firstmain trenches 120 a. The first trench dopant containing layer 131 may beformed using the same material and method as the trench dopantcontaining layer 130 described with reference to FIG. 1F.

A thermal treatment process may be performed. Thereby, the secondconductive type dopants in the first trench dopant containing layer 131may penetrate the bottom surfaces and the sidewalls of the first maintrenches 120 a to spread into the epitaxial substrate 102. Therefore, aportion of the epitaxial substrate 102 adjacent to the bottoms surfacesand the sidewalls of the first main trenches 120 a may be counter-dopedwith the second conductive type dopant, so that a first doping region133 may be formed, and also a concentration of the second conductivetype dopant a portion of the ground region 124 a adjacent to thesidewalls of the first main trenches 120 a and a portion of the bodyregion 112 may be increased.

Referring to FIG. 5B, by anisotropically etching the first trench dopantcontaining layer 131, the first trench dopant containing layer 131 onthe bottom surfaces of the first main trenches 120 a may be removed, andthe first trench dopant containing layer 131 on the sidewalls of thefirst main trenches 120 a may remain. By using the hard mask pattern 118and the remaining first trench dopant containing layer 131 as an etchstop layer, the bottom surfaces of the first main trenches 120 a areetched so that second main trenches 120 b may be formed. The firstdoping region 133 below the bottom surfaces of the first main trenches120 a may be removed. The bottom surfaces of the second main trenches120 b may be formed of the epitaxial substrate 102.

Each of the second main trenches 120 b may include an upper region 120Uand a lower region 120L. The width W1 of the upper region 120U of thesecond main trenches 120 b may be broader than that W2 of the lowerregions 120L of the second main trenches 120 b. The upper regions 120Lof the second main trenches 120 b may be a region where the remainingfirst trench dopant containing layer 131 is disposed on the sidewall ofthe second main trenches 120 b.

Referring to FIG. 5C, a second trench dopant containing layer 135 may beformed on the semiconductor substrates 100 and 102. The second trenchdopant containing layer 135 may include a second conductive type dopant.The second trench dopant containing layer 135 may be conformally formedon the bottom surfaces and the sidewalls of the second main trenches 120b so that empty inner spaces surrounded by the second trench dopantcontaining layer 135 may be defined in the second main trenches 120 b.The second trench dopant containing layer 135 may be formed using thesame material and method as the first trench dopant containing layer 131described with reference to FIG. 3A.

The second trench dopant containing layer 135 may be thermally treated.Therefore, the second conductive type dopants in the second trenchdopant containing layer 135 may diffuse into the sidewalls and thebottom surfaces of the second main trenches 120 b. Portions of theepitaxial substrate 102 adjacent to the sidewalls and the bottomsurfaces of the second main trenches 120 b are counter-doped so that asecond doping region 137 doped with the second conductive type dopantmay be formed. The second doping region 137 below the bottom surfaces ofthe second main trenches 120 b may contact the base substrate 100. Thesecond conductive type dopant in the second trench dopant containinglayer 135 diffuses into the first doping region 133, so that aconcentration of the second conductive type dopant of the first dopingregion 133 may be higher than that of the second doping region 137.

Referring to FIG. 5D, the second trench dopant containing layer 135 andthe remaining first trench dopant containing layer 131 may be removed.The second trench dopant containing layer 135 and the remaining firsttrench dopant containing layer 131 may be removed through a wet etchingmethod.

A semiconductor layer 141 may be formed on the bottom surfaces and thesidewalls of the second main trenches 120 b. The semiconductor layer 141may include at least one of epitaxial layer and polysilicon layer. Ifthe semiconductor layer 141 includes the epitaxial layer, thesemiconductor layer 141 may be formed on the bottom surfaces and thesidewalls of the second main trenches 120 b through an epitaxialprocess. The semiconductor layer 141 may be conformally formed on theinside of the second main trench 120 b, so that empty inner spacessurrounded by the semiconductor layer 141 may be defined in the secondmain trenches 120 b. The semiconductor layer 141 may be doped with thesecond conductive type dopant. Unlike this, the semiconductor layer 141may not be doped with the second conductive type dopant.

Gap fill patterns 143 filling the inner space of the second maintrenches 120 b may be formed. The width of a lower portion of the gapfill insulation pattern 143 filling the lower region of the second maintrench 120 b may be narrower than the width of an upper portion of thegap fill insulation pattern 143 filling the upper region of the secondmain trench 120 b. The gap fill insulation patterns 143 may be formedusing the same method and material as the gap fill insulation patterns142 described with reference to FIG. 3G in the first embodiment. Unlikethose shown in the drawings, according to an embodiment, thesemiconductor layer 141 may be omitted. In this case, the cap fillinsulation patterns 143 may directly contract the second doping region137.

A semiconductor pillar 145 may be defined between the respectivelyadjacent gap fill insulation patterns 143. The semiconductor pillar 145may be doped with the first conductive type dopant. The semiconductorpillar 145 may be a portion of the epitaxial substrate 102 disposedbetween the respectively adjacent gap fill insulation patterns 143.

Referring to FIG. 5E, a mask layer 151 covering the electrode region Bmay be formed. The mask layer 151 may be a photoresist layer. The masklayer 151 covers a portion of the second gate electrode 114 b adjacentto the electrode region B and may not cover the semiconductor pillar144, the body region 112, the ground region 124 a, the semiconductorlayer 141, and the gap fill insulation patterns 143.

By using the mask layer 151 as an ion implantation mask, the firstconductive type dopant ion 152 may be implanted. In this case, theinsulation layer 104 may be used as a buffer layer for implanting thefirst conductive type dopant ion 152. Upper portions of the body region112 and the ground region 124 a may be counter-doped with the firstconductive type dopant. The first conductive type dopant ion 152 may notbe implanted on the body region 112 below the contact part of the secondgate electrode 114 b.

The first conductive type dopant ion 152 may be implanted on the upperportion of the body region 112, the upper portion of the ground region124 a, and the upper portion of the semiconductor layer 141, so that asource region 154 doped with the first conductive type dopant may beformed. The source region 154 may be formed at the both sides of theupper region of the second main trench 120 b. The source region 154 maybe formed at the both sides of the first gate electrode 114 a and oneside of the second gate electrode adjacent to the first gate electrode114 a.

Referring to FIG. 5F, an interlayer insulation layer 161 may be formedon the semiconductor substrates 100 and 102. A first wiring 162penetrating the thick oxide layer 104 and interlayer insulation layer161 to contact the source region 154, a second wiring 164 penetratingthe interlayer insulation layer 161 and the second capping insulationlayer 116 b to contact the second gate electrode 114 b, and a thirdwiring 166 on the interlayer insulation layer 161 of the electroderegion B may be formed. The first to third wirings 162, 164, and 166 maybe formed using the same method as those 162, 164, and 166 withreference to FIG. 1I in the first embodiment.

A semiconductor device formed according to the method of the thirdembodiment will be described with reference to FIG. 5F.

Referring to FIG. 5F, semiconductor substrates 100 and 102 including acell region A and an electrode region B are provided. The semiconductorsubstrates 100 and 102 may include a first conductive type basesubstrate 100 and a first conductive type epitaxial substrate 102, whichare sequentially stacked.

A plurality of trenches 120 b may be formed in the epitaxial substrate102. Each of the trenches 120 b may be filled with a semiconductor layer141 and gap fill insulation patterns 143. The semiconductor layer 141includes at least one of epitaxial layer and polysilicon layer. Thesemiconductor layer 141 may cover the bottom surfaces and the sidewallsof the trenches 120 b and may fill inner spaces surrounded by thesemiconductor layer 141 in the trenches 120 b.

Each of the trenches 120 b may include a lower region having a firstwidth and an upper region having a broader width than the lower region.The semiconductor layer 141 may substantially have a uniform thickness.Accordingly, the width of a lower portion of the gap fill insulationpatterns 143 filling the lower region of each of the trenches 120 b maybe narrower than that of an upper portion of the gap fill insulationpatterns 143 filling the upper region.

A semiconductor pillar 145 may be defined between the respectivelyadjacent gap fill insulation patterns 143. The semiconductor pillar 144may be a portion of the epitaxial substrate 102 interposed between therespectively adjacent gap fill insulation patterns 143.

Recess regions 108 a and 108 b may be formed in the epitaxial substrate102 at one side of the trenches 120 b. For example, the recess regions108 a and 108 b may include a first recess region 108 a formed in thesemiconductor pillar 114 and a second recess region 108 b formed at oneside of the trench 120 b adjacent to the electrode region B. Based onthe top surface of the base substrate 100, the bottom surfaces of therecess regions 108 a and 108 b may be disposed at a higher level thanthe bottom surfaces of the trenches 120 b.

As described with reference to FIG. 1I in the first embodiment, gateinsulation layers 113 a and 113 b and gate electrodes 114 a and 114 bmay fill the recess regions 108 a and 108 b. As described with referenceto FIG. 1I in the first embodiment, a second gate electrode 114 b mayinclude a body part and a contact part, and capping insulation layers116 a and 116 b may cover gate electrodes 114 a and 114 b.

A body region 112 may surround the sidewalls of the recess regions 108 aand 108 b. The body region 112 may surround upper portions of thesidewalls of the recess regions 108 a and 108 b, and the lower portionsand bottom surfaces of the sidewalls of the recess regions 108 a and 108b may be formed of the epitaxial substrate 102. The body region 112 maybe a portion of the epitaxial substrate 102 adjacent to the sidewalls ofthe recess regions 108 a and 108 b, which is counter-doped with thesecond conductive type dopant.

A ground region 124 a may surround the sidewall of the upper region ofthe trench 120 b. The ground region 124 a may be a portion of theepitaxial substrate 102 adjacent to the sidewall of the upper region,which is counter-doped with the second conductive type dopant. Aconcentration of the second conductive type dopant of the ground region124 a may be higher than that of the body region 112.

First and second doping regions 133 and 137 may be formed below theinside of the trench 120 b. The first doping region 133 may be a portionof the epitaxial substrate 102 adjacent to the boundary between theupper region and the lower region, which is counter-doped with thesecond conductive type dopant. The second doping region 137 may be aportion of the epitaxial substrate 102 adjacent to the bottom surfaceand sidewall of the bottom region of the trench 120 b.

The second doping region 137 below the bottom surface of the trench 120b may contact the base substrate 100. A concentration of the secondconductive type of the first doping region 133 may be higher than thatof the second doping region 137. A concentration of the secondconductive type dopant of the doping regions 133 and 137 may be lowerthan that of the ground region 124 a.

A source region 155 may be disposed in the epitaxial substrate 102 atthe both sides of the trenches 120 b. The source region 155 may bedisposed between the first recess region 108 a and the trenches 120 b.The source region 155 may be an upper portion of the semiconductor layer141 adjacent to the top surface of the epitaxial substrate 102, an upperportion of the semiconductor layer 141, an upper portion of the bodyregion 112, and an upper portion of the ground region 124 a, all ofwhich are coped with the first conductive dopant.

A drain region 168 doped with the first conductive type dopant may bedisposed on the bottom surface of the base substrate 100. The drainregion 168 may be formed by implanting the first conductive type dopantion on the bottom surface of the base substrate 100.

A first wiring 162 penetrating the thick oxide layer 104 and theinterlayer insulation layer 161 formed on the epitaxial substrate 102 tocontact the source region 155, a second wiring 164 penetrating theinterlayer insulation layer 161 and the second capping insulation layer116 b to contact the second gate electrode 114 b, and a third wiring 166on the interlayer insulation layer 161 of the electrode region B may bedisposed.

According to the embodiment of the present invention, a doping region137 below the bottom surface of the trench 120 b contacts the basesubstrate 100. Unlike this, according to a modification of theembodiment of the present invention, a doping region may not contact thebase substrate 100. This will be described with reference to FIG. 6.

FIG. 6 is a view illustrating a semiconductor device according to amodification of the third embodiment of the present invention.

Referring to FIG. 6, the semiconductor device according to amodification of the third embodiment of the present invention is similarto that described with reference to FIG. 5F. However, a second dopingregion 137 a below the bottom surface of a trench 120 b may not contactthe top surface of the base substrate 100. Thereby, a semiconductorpillar 145 and an epitaxial substrate 102 may contact each other.

According to an embodiment of the present invention, a trench dopantcontaining layer including a dopant of a second conductive type isformed on the sidewall and the bottom surface of a trench in asemiconductor substrate of a first conductive type and also the dopantin the trench dopant containing layer diffuses into the semiconductorsubstrate to form a doping region. Accordingly, a concentration of thesecond conductive dopant in the doping region is uniform so that ahighly-reliable semiconductor device may be realized.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the present invention. Thus, to the maximumextent allowed by law, the scope of the present invention is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

1. A method of fabricating a semiconductor device, the methodcomprising: forming a trench in a semiconductor substrate of a firstconductive type; forming a trench dopant containing layer including adopant of a second conductive type on a sidewall and a bottom surface ofthe trench; forming a doping region by diffusing the dopant in thetrench dopant containing layer into the semiconductor substrate; andremoving the trench dopant containing layer.
 2. The method of claim 1,further comprising: forming a recess region in the semiconductorsubstrate; forming a body dopant containing spacer having the secondconductive type dopant on a sidewall of the recess region; and forming abody region by diffusing the dopant in the body dopant containing spacerinto the semiconductor substrate.
 3. The method of claim 2, furthercomprising: removing the body dopant containing spacer; forming a gateinsulation layer to cover a bottom surface and a sidewall of the recessregion; and forming a gate electrode to fill the recess region.
 4. Themethod of claim 2, wherein the forming of the trench comprises forming asub trench at one side of the body region and forming a main trench byetching a bottom surface of the sub trench, further comprising, beforethe forming of the main trench, forming a ground region extending intothe body region by implanting the second conductive type dopant into thebottom surface of the sub trench.
 5. The method of claim 4, wherein aconcentration of the second conductive type dopant is higher in theground region than the body region.
 6. The method of claim 1, whereinthe dopant in the trench dopant containing layer diffuses into thesemiconductor substrate through heat treatment.
 7. The method of claim1, further comprising forming a semiconductor layer on the sidewall andthe bottom surface of the trench.
 8. The method of claim 7, furthercomprising: forming a source region by implanting the first conductivetype dopant into an upper portion of the semiconductor layer, an upperportion of the body region, and an upper portion of the ground region;and forming a drain region by implanting the first conductive typedopant into a bottom surface of the semiconductor substrate.
 9. Themethod of claim 7, after the forming of the semiconductor layer, furthercomprising forming a gap fill insulation pattern that fills the trench.10. The method of claim 1, wherein the trench dopant containing layercomprises one of Boron Silica Glass (BSG) or Phosphorus Silica Glass(PSG).
 11. The method of claim 1, wherein the semiconductor substratecomprises a base substrate and an epitaxial substrate on the basesubstrate; and the trench is formed in the epitaxial substrate.
 12. Themethod of claim 11, wherein the doping region contacts the basesubstrate.
 13. The method of claim 11, wherein the doping region doesnot contact the base substrate by a portion of the epitaxial substrateinterposed between the base substrate and the doping region.
 14. Amethod of fabricating a semiconductor device, the method comprising:forming a first trench in a semiconductor substrate of a firstconductive type; forming a first trench dopant containing layerincluding a dopant of a second conductive type on a sidewall and abottom surface of the first trench; forming a first doping region bydiffusing the dopant in the first trench dopant containing layer intothe semiconductor substrate; forming a second trench by etching thebottom surface of the first trench; forming a second trench dopantcontaining layer including the second conductive dopant on a sidewalland a bottom surface of the second trench; forming a second dopingregion by diffusing the dopant of the second trench dopant containinglayer into the semiconductor substrate; and removing the second trenchdopant containing layer.
 15. The method of claim 14, further comprisingforming a semiconductor layer on the sidewall and the bottom surface ofthe second trench.
 16. The method of claim 14, before the forming of thesecond trench, further comprising removing the first trench dopantcontaining layer on the bottom surface of the first trench and the firsttrench dopant containing layer remaining the first trench dopantcontaining layer on the sidewall of the first trench.
 17. The method ofclaim 16, wherein a width of a lower region of the second trench isnarrower than that of an upper region of the second trench.
 18. Asemiconductor device comprising: gap fill insulation patterns fillingtrenches in a substrate; a semiconductor pillar defined between the gapfill insulation patterns and doped with a dopant of a first conductivetype; a gate electrode disposed in a recess region in the semiconductorpillar; a doping region disposed below the trenches and doped with adopant of a second conductive type; and a body region disposed in thesemiconductor pillar and surrounding a sidewall of the recess region,wherein the body region is doped with the second conductive type dopant;and a width of an upper region of the trenches is broader than of alower region of the trenches.
 19. The semiconductor device of claim 18,wherein a sidewall of the trenches has a step-shaped structure.
 20. Thesemiconductor device of claim 18, wherein the doping region comprises afirst doping region adjacent to a boundary between the upper region andthe lower region of the trenches and a second doping region except thefirst doping region; and a concentration of the second conductive typedopant of the first doping region is higher than that of the seconddoping region.